2000. 8. 23 1/4 semiconductor technical data KRC231M~krc235m epitaxial planar npn transistor revision no : 1 switching application. audio muting application. interface circuit and driver circuit application. features with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ equivalent circuit maximum rating (ta=25 1 ) r1 c e b characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 5 v collector current i c 600 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
2000. 8. 23 2/4 KRC231M~krc235m revision no : 1 electrical characteristics (ta=25 1 ) note : * characteristic of transistor only. characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =1ma 15 - - v collector-base breakdown voltage bv cbo i c =50 a 30 - - v emitter-base breakdown voltage bv ebo i e =50 a 5.0 - - v collector cut-off current i cbo v cb =30v - - 0.5 a collector-emitter saturation voltage v ce(sat) i c =50ma, i b =2.5ma - 40 80 mv dc current gain h fe v ce =5v, i c =50ma 200 350 800 - input resistor KRC231M r 1 - 2.2 - k u krc232m - 5.6 - krc233m - 10 - krc234m - 4.7 - krc235m - 6.8 - transition frequency f t * v ce =10v, i e =-50ma, f=100mhz - 200 - mhz on resistance ron f=1khz, i b =1ma, v in =0.3v - 0.6 - u
2000. 8. 23 3/4 KRC231M~krc235m revision no : 1 collector-emitter saturation 1 ce(sat) 30 10 3 1 collector current i (ma) c v - i h - i c collector current i (ma) 0.1 fe 1 dc current gain h fe c 0.3 1 3 10 30 100 300 1k 3 10 30 100 300 1k 2k common emitter v =5v ta=25 c ce ce(sat) c voltage v (mv) 100 300 1 k 3 10 30 100 300 500 50 5 common emitter v =5v ta=25 c ce i /i =20 c b b c i /i =10 100 30 10 3 1 0.3 0.1 0.03 b on on resistance r ( ? ) 0.1 on 0.01 base current i (ma) b r - i 0.3 1 3 10 30 100 300 1k f=1khz v =0.3v v v ~ i =1ma b hh v in
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